发明名称 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
摘要 |
The temperature of a bipolar semiconductor element using a wide-gap semiconductor is raised using heating means, such as a heater, to obtain a power semiconductor device being large in controllable current and low in loss. The temperature is set at a temperature higher than the temperature at which the decrement of the steady loss of the wide-gap bipolar semiconductor element corresponding to the decrement of the built-in voltage lowering depending on the temperature rising of the wide-gap bipolar semiconductor element is larger than the increment of the steady loss corresponding to the increment of the ON resistance increasing depending on the temperature rising.
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申请公布号 |
US7462886(B2) |
申请公布日期 |
2008.12.09 |
申请号 |
US20060421400 |
申请日期 |
2006.05.31 |
申请人 |
THE KANSAI ELECTRIC POWER CO., INC. |
发明人 |
SUGAWARA YOSHITAKA |
分类号 |
H01L29/74;H01L23/34;H01L29/20;H01L29/24;H01L29/744 |
主分类号 |
H01L29/74 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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