| 摘要 |
Disclosed is a film-forming apparatus (100) comprising a processing vessel (11), wherein a TiCl4 gas and an NH3 gas are supplied into the processing vessel (11) for forming a TiN film on a substrate W placed in the processing vessel (11) by CVD. The processing vessel (11) is provided with an exhaust structure (300). This exhaust structure (300) comprises an exhaust pipe (51) for discharging the exhaust gas in the processing vessel (11), a trap mechanism (54) provided to the exhaust pipe (51) for trapping a by-product in the exhaust gas, and a heated reaction gas supply mechanism (60) for supplying a heated reaction gas, which is reacted with a component in the exhaust gas for obtaining a certain by-product, into the exhaust gas. Specifically, an NH3 gas is supplied by the heated reaction gas supply mechanism (60) as a heated reaction gas, and NH4Cl is produced as a by-product. ® KIPO & WIPO 2009
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