| 摘要 |
The method of manufacturing the semiconductor device is provided to prevent dislocation and improve the insulation property between devices forms by making the edge of the trench round. The method of manufacturing the semiconductor device comprises as follows. A step is for forming the insulating layer pattern on the semiconductor substrate(10). A step is for forming the first trench in the semiconductor substrate by performing the etching process using as a mask as the insulating layer pattern. A step is for exposing the edge of the first trench by performing the first cleaning process on the semiconductor substrate. A step is for forming the second trench, the round edge of the first trench by ion-implanting the Ge ion in the semiconductor substrate. A step is for filling the insulating material in the second trench. A step is for removing the insulating layer pattern.
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