MAGNETORESISTANCE ELEMENT AND RANDOM-ACCESS MEMORY DEVICE COMPRISING THEREOF

摘要

The magnetoresistance element and random-access memory device comprising the same are provided to obtain the multi-layer thin film junction including Fe of diamagnetism. The magnetic reluctance element including the multi-layered thin film junction having the stack structure of Fe / MgO / Fe is provided. The magnetic reluctance element has the modified body-centered cubic structure. Modified BCC which the a- axis lattice constant of Fe(2.7 Š) is changed to 0.2~0.4 Š. (1) The distance between each atoms of the Fe layer bonded into the MgO surface: a1a2a3a4. (2) Fe interatomic bonding angle: alpha beta gamma =90‹, and alpha + beta =180‹.