| 发明名称 |
Method for Producing a Field-Effect Transistor, Field-Effect Transistor and Integrated Circuit Arrangement |
| 摘要 |
A method for producing a tunnel field-effect transistor is disclosed. Connection regions of different doping types are produced by means of self-aligning implantation methods. |
| 申请公布号 |
US2008296703(A1) |
申请公布日期 |
2008.12.04 |
| 申请号 |
US20050814364 |
申请日期 |
2005.12.09 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KAKOSCHKE RONALD;TEWS HELMUT |
| 分类号 |
H01L29/00;H01L21/425 |
主分类号 |
H01L29/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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