发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To suppress the quality deterioration of high-frequency signals without using complicated steps in a semiconductor device that is formed by stacking a plurality of semiconductor chips. <P>SOLUTION: Semiconductor chips 1 and 2 are cut out from a semiconductor wafer in such a state that both of the chips are connected to a connection wiring 10 between the chips. Conductor bumps 12 are formed on the wiring layer at the uppermost layer. A thermosetting resin is coated on the semiconductor chip 1 [Fig.(a)], and the semiconductor chip 2 is folded and bonded onto the semiconductor chip 1 [Fig.(b)]. The semiconductor chip is bonded onto a substrate 3 by an adhesive 4 [Fig(c)]. After the semiconductor chip 1 and the substrate 3 are connected by a bonding wire 6 and sealed by a sealing resin 7, an external terminal 9 is formed on the back face of the substrate 3 [Fig.(d)]. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
申请公布号 |
JP2008294318(A) |
申请公布日期 |
2008.12.04 |
申请号 |
JP20070139939 |
申请日期 |
2007.05.28 |
申请人 |
NEC CORP |
发明人 |
ABE KATSUMI;OSHIMA YOICHI;FUJII KENICHIRO;KOKATSU TOSHINOBU |
分类号 |
H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L25/065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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