发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To suppress the quality deterioration of high-frequency signals without using complicated steps in a semiconductor device that is formed by stacking a plurality of semiconductor chips. <P>SOLUTION: Semiconductor chips 1 and 2 are cut out from a semiconductor wafer in such a state that both of the chips are connected to a connection wiring 10 between the chips. Conductor bumps 12 are formed on the wiring layer at the uppermost layer. A thermosetting resin is coated on the semiconductor chip 1 [Fig.(a)], and the semiconductor chip 2 is folded and bonded onto the semiconductor chip 1 [Fig.(b)]. The semiconductor chip is bonded onto a substrate 3 by an adhesive 4 [Fig(c)]. After the semiconductor chip 1 and the substrate 3 are connected by a bonding wire 6 and sealed by a sealing resin 7, an external terminal 9 is formed on the back face of the substrate 3 [Fig.(d)]. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2008294318(A) 申请公布日期 2008.12.04
申请号 JP20070139939 申请日期 2007.05.28
申请人 NEC CORP 发明人 ABE KATSUMI;OSHIMA YOICHI;FUJII KENICHIRO;KOKATSU TOSHINOBU
分类号 H01L25/065;H01L25/07;H01L25/18 主分类号 H01L25/065
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