| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing a SiC single crystal by which the temperature of a seed crystal, the temperature of a raw material and the temperature distribution in a growth space area can be easily controlled by a heating method not depending on self-heating of a crucible, in the production of the SiC single crystal by a sublimation and redeposition method. SOLUTION: After making the inside of an outer chamber 10 including the inside of a crucible 1 into a vacuum state, heaters 4, 5 are induction-heated by applying an electric current to induction coils 8, 9, and the inside of the crucible 1 is heated to a prescribed temperature by heating the crucible 1 by the radiant heat of the heaters. At that time, the crucible 1 is heated while generating a temperature difference with heaters 4, 5 by controlling the frequency of current applied to or the amount of current applied to respective induction coils 8, 9 while measuring the temperatures of each part of the crucible and heaters 4, 5 through radiation thermometers 18-22. Further, it becomes possible to separately regulate the temperature of the surface of a growing crystal and the temperature of a powdery raw material 3 with a good controllability by insulating heat between the heater 4 and the heater 5 by a partition wall part 6f. COPYRIGHT: (C)2009,JPO&INPIT
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