| 摘要 |
Systems and methods for controlling the effective dielectric constant of materials used in a semiconductor device are shown and described. In one embodiment, a method comprises providing a semiconductor substrate with a plurality of pillars formed thereon, depositing a first layer of dielectric material over a plurality of pillars, removing a portion of the first layer deposited over the plurality of pillars, and depositing a second layer of dielectric material over the plurality of pillars, where the second layer leaves a plurality of voids between the plurality of pillars.
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