| 摘要 |
A semiconductor laser diode capable of improving reliability and mass-productivity is disclosed. The semiconductor laser diode comprises a first clad layer; a first optical guide layer disposed on the first clad layer; an active layer disposed on the first optical guide layer; a second optical guide layer disposed on the active layer; and a second clad layer disposed on the second optical guide layer, having a greater band gap energy than the second optical guide layer, the band gap energy decreasing as being farther from the second optical guide layer.
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