USE OF ALLOYS TO PROVIDE LOW DEFECT GATE FULL SILICIDATION

摘要

The invention provides a semiconductor device (100) and method of manufacture therefore. The method for manufacturing the semiconductor device, in one embodiment, includes forming an NMOS gate structure over a substrate (110), wherein the NMOS gate structure (130) includes an NMOS gate dielectric (140) and an NMOS gate electrode (150). The method further includes forming n-type source/drain regions within the substrate proximate the NMOS gate structure, and forming a metal alloy layer over the NMOS gate electrode. The method additionally includes incorporating the metal alloy into the NMOS gate electrode to form an NMOS gate electrode fully suicided with the metal alloy.