发明名称 TEST STRUCTURE FOR RADIO FREQUENCY MOS TRANSISTOR
摘要 A test structure for the radio frequency MOS transistor is provided to block the influence to the AC property of the RF MOS. A test structure(200) comprises the gate pads(120), the test pad(210), the fuse(220), the diodes(230). The gate pad is connected to the gate terminal of the RF MOS. The fuse is connected between the gate pad and the test pad. One side of the diode is connected between the fuse and the test pad, and the other side of the diode is connected to the ground power. The diode removes the plasma charge generated from the gate insulating layer in the manufacturing process of RF MOS.
申请公布号 KR20080105850(A) 申请公布日期 2008.12.04
申请号 KR20070053955 申请日期 2007.06.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, SEUNG JAE;KIM, YOUNG KWANG;CHUNG, CHUL HO
分类号 H01L21/66 主分类号 H01L21/66
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