| 摘要 |
A cleaning method of wafer is provided to increase the process yield by performing the cleaning and surface treatment of wafer while supplying the atmospheric pressure plasma and washing solution. A cleaning method of wafer includes the following steps: the wafer input step which puts the wafer in the processing chamber so that the junction of wafer face the top(S10); the wafer cleaning and the surface treatment step which supplies the atmospheric pressure plasma and washing solution to the junction of wafer and which washes the junction of wafer and surface-processed(S20); the wafer drawing step for drawing out the wafer from the processing chamber(S30).
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