PLASMA ION IMPLANTATION SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a plasma ion implantation system which can efficiently discharge constantly even in a wide process area while solving the problem of being inherent to an inductively coupled plasma generation method, and can secure a plasma uniformity while unnecessary ionization and dissociation are miniaturized to improve the process efficiency.

SOLUTION: The system comprises the step of: easily controlling plasma ions to be implanted by generating capacitively coupled plasma (CCP) with characteristics advantageous to an ion implantation process such that the only ion and polymerization radical component necessary for the ion implantation process can be generated in place of inducively coupled plasma (ICP) which induces unnecessary ion generation and excess dissociation of a polymerization radical with a high conduction temperature, and by cleaning a vacuum chamber; easily adjusting plasma uniformity by miniaturizing problems of unnecessary vapor deposition and the occurrence of contamination by reducing deposition of a polymer film on the surface of an object to be processed, increasing the concentration of a component for use in plasma ion implantation, and using a plane type electrode; and easily securing the uniformity of the plasma ions implanted to the object to be processed.

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