| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can have superior heat dissipation performance while preventing cracking and peeling due to thermal stress. <P>SOLUTION: In the semiconductor device 10, an intervene part 19 provided between the other surface 14b of a ceramic substrate 14 and a heat sink 13 is provided with a coupling region (a metal plate 16 and a stress relaxation member 20) coupling the other surface 14b and the heat sink 13 to each other and a plurality of non-coupling regions (lateral grooves 21 and longitudinal grooves 22) which do not couple them. The lateral grooves 21 and longitudinal grooves 22 are formed in a groove shape which extends thin and long, and the lateral grooves 21 and longitudinal grooves 22 which are disposed on the outermost sides among the plurality of grooves 21 and 22 arranged side by side having width directions orderly are larger in width than the lateral grooves 21 and longitudinal grooves 22 which are disposed on the innermost sides. Lateral grooves 21 and longitudinal grooves 22 which are disposed on outer sides between grooves 21 and 22 which are adjacent in the width directions of the lateral grooves 21 and longitudinal grooves 22 are formed wider than lateral grooves 21 and longitudinal grooves 22 which are disposed on inner sides. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
