| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a program and an erase method of a nonvolatile memory. <P>SOLUTION: The method of programming or erasing the nonvolatile memory device having a charge storage layer includes a step to perform at least one unit programming or erasing loop. Each unit programming or erasing loop includes a step to apply a programming pulse, an erasing pulse, a time delay, a soft erase pulse, and soft programming pulse and/or a verifying pulse, as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
