SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve low power consumption by reducing the junction capacitance as compared with prior art by a simpler process, and to provide a manufacturing method thereof.

SOLUTION: A semiconductor film having a cavity between itself and a base substrate is formed on a base substrate by forming an insulating film having an opening on the base substrate and transposing a portion of a bond substrate to the base substrate while holding the insulating film therebetween. A semiconductor device having a semiconductor element such as a transistor is formed by using the semiconductor film. The transistor has a cavity between the semiconductor film used as an active layer and the base substrate. The single cavity or the plurality of cavities may be employed.

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