发明名称 SEMICONDUCTOR DEVICE, AND GATE WITHSTAND VOLTAGE TEST METHOD
摘要 PROBLEM TO BE SOLVED: To ensure highly accurate screening using simple and inexpensive means in a MOS type semiconductor element. SOLUTION: The semiconductor device 10 of the present invention includes a driver circuit 12 and a MOS type semiconductor element 14 operable by inputting a signal from an output element of the driver circuit 12 into a gate. The driver circuit 12 has: a test voltage application terminal VG for applying gate withstand voltage test voltage to the gate of the MOS type semiconductor element 14 at the time of a gate withstand test; and an output element off means for fixing the output element to an off state at the time of the gate withstand voltage test. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294334(A) 申请公布日期 2008.12.04
申请号 JP20070140214 申请日期 2007.05.28
申请人 FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD 发明人 TEZUKA SHINICHI
分类号 H01L21/822;G01R31/28;H01L21/8234;H01L27/04;H01L27/088 主分类号 H01L21/822
代理机构 代理人
主权项
地址