发明名称 |
SEMICONDUCTOR DEVICE, AND GATE WITHSTAND VOLTAGE TEST METHOD |
摘要 |
PROBLEM TO BE SOLVED: To ensure highly accurate screening using simple and inexpensive means in a MOS type semiconductor element. SOLUTION: The semiconductor device 10 of the present invention includes a driver circuit 12 and a MOS type semiconductor element 14 operable by inputting a signal from an output element of the driver circuit 12 into a gate. The driver circuit 12 has: a test voltage application terminal VG for applying gate withstand voltage test voltage to the gate of the MOS type semiconductor element 14 at the time of a gate withstand test; and an output element off means for fixing the output element to an off state at the time of the gate withstand voltage test. COPYRIGHT: (C)2009,JPO&INPIT
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申请公布号 |
JP2008294334(A) |
申请公布日期 |
2008.12.04 |
申请号 |
JP20070140214 |
申请日期 |
2007.05.28 |
申请人 |
FUJI ELECTRIC DEVICE TECHNOLOGY CO LTD |
发明人 |
TEZUKA SHINICHI |
分类号 |
H01L21/822;G01R31/28;H01L21/8234;H01L27/04;H01L27/088 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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