发明名称 Thick Crystalline Silicon Film On Large Substrates for Solar Applications
摘要 An apparatus for converting sunlight to electricity comprises a sheet of soda lime glass having a softening point not exceeding 600° C. and a layer of crystalline silicon over said sheet of soda lime glass. The layer has a thickness not less than about 5 microns and grains with grain size not less than about 100 microns. A method for making a device for converting sunlight to electricity comprises forming a film on a soda lime glass substrate, dispersing silicon powder onto the film and pressing a surface onto the silicon powder to form a layer of silicon powder on said film. The substrate and film are heated from below to a temperature so that the soda lime glass substrate softens. While the substrate is in a softened state, the silicon powder layer is heated by scanning a line focus laser beam or an elongated heater strip over a spatial sequence of adjacent elongated zones of the silicon powder consecutively so that the silicon powder in each of the zones melts and recrystallizes consecutively to form a layer of crystalline silicon with a thickness in the range of 5 to 100 micron over said film. Preferably the laser beam or heater strip scans and heats a triangular area of the layer of silicon powder, where the area has an apex leading said scan area during scanning.
申请公布号 US2008295885(A1) 申请公布日期 2008.12.04
申请号 US20080102775 申请日期 2008.04.14
申请人 LEE SHING MAN 发明人 LEE SHING MAN
分类号 H01L31/0216;B05D5/12 主分类号 H01L31/0216
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