发明名称 |
Double gate manufactured with locos techniques |
摘要 |
This invention discloses a trenched semiconductor power device that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The trenched gate further includes at least two mutually insulated trench-filling segments with a bottom insulation layer surrounding a bottom trench-filling segment having a bird-beak shaped layer on a top portion of the bottom insulation attached to sidewalls of the trench extending above a top surface of the bottom trench-filling segment.
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申请公布号 |
US2008296673(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20070807444 |
申请日期 |
2007.05.29 |
申请人 |
ALPHA & OMEGA SEMICONDUCTOR, LTD |
发明人 |
TAI SUNG-SHAN;HU YONGZHONG |
分类号 |
H01L29/94;H01L21/336 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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