| 摘要 |
<p>A dry etching method of the silicon nitride film is provided to dry-etch the silicon nitride film using the mixing gas including the fluorine gas and oxygen gas instead of the gas such as SF6 which causes the global worming. A dry etching method includes the step for preparing the target object on which the silicon nitride film(22) is laminated on the substrate; the step for positioning the target object into the dry etching device in which the high frequency electrode and the opposite electrode is arranged parallel; the step for loading the target object on the high frequency electrode; the step for introducing the fluorine gas and oxygen gas into the dry etching device by lowering the pressure of etching device; the step for etching the silicon nitride film by applying the high frequency to the high frequency electrode.</p> |
