| 摘要 |
<p>A semiconductor 100 has a P- body region 41 and an N- drift region 12 in the order from an upper surface side thereof. A gate trench 21 and a terminal trench 62 passing through the P- body region 41 are formed. The respective trenches are surrounded with P diffusion regions 51, 53 at the bottom thereof. The gate trench 21 builds a gate electrode 22 therein. A P-- diffusion region 52, which is in contact with the end portion in a lengthwise direction of the gate trench 21 and is lower in concentration than the P- body region 41 and the P diffusion region 51, is formed. The P-- diffusion region 52 is depleted prior to the P diffusion region 51 when the gate voltage is off. The P-- diffusion region 52 serves as a hole supply path to the P diffusion region 51 when the gate voltage is on. ® KIPO & WIPO 2009</p> |
