| 摘要 |
A growth method of GaN crystal and a GaN crystal substrate are provided to grow the GaN crystallization thickly by suppressing the generation of the crack. A growth method of GaN crystal on the GaN seed crystal substrate includes the following processes: the process of preparing for the GaN seed crystal substrate including the first dopant in which the coefficient of thermal expansion of the GaN seed crystal substrate(10p) is enlarged in comparison with the GaN crystallization; the process of growing the GaN crystallization more than the thickness 1 mm on the GaN seed crystal substrate. The first dopant is comprises In, P, Al, As, Sb, O, and Si.
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