| 摘要 |
PROBLEM TO BE SOLVED: To further improve the high-frequency high-output characteristics of a semiconductor device with a MOSFET for high-frequency high output. SOLUTION: The semiconductor device has the MOSFET with band-shaped second conductivity-type source and drain regions formed in a first conductivity-type semiconductor region 20 formed on a semiconductor substrate 1 at a specified interval and electrically connected to a source electrode 7 and a drain electrode 3, respectively. The MOSFET further has a gate electrode 6, formed on the first conductivity type semiconductor region 20 through a gate insulating film 27 and forming a channel-forming region 26 between the source and drain regions. In the semiconductor device with the MOSFET, a second conductivity-type region 30 being electrically connected to the drain electrode 3 and forming a diode with the first conductivity-type semiconductor region 20 is formed in the first conductivity-type semiconductor region 20. In the semiconductor device, the breakdown voltage of the diode is lower than that between the source/drain of the MOSFET. COPYRIGHT: (C)2009,JPO&INPIT
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