发明名称 |
LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS |
摘要 |
An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.
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申请公布号 |
US2008299487(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20070828809 |
申请日期 |
2007.07.26 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG CHING-YU |
分类号 |
G03C1/04;G03F5/00 |
主分类号 |
G03C1/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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