发明名称 LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS
摘要 An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer.
申请公布号 US2008299487(A1) 申请公布日期 2008.12.04
申请号 US20070828809 申请日期 2007.07.26
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG CHING-YU
分类号 G03C1/04;G03F5/00 主分类号 G03C1/04
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