RESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

A resistivity memory device is provided to lower the manufacturing cost and increase the adhesion property with other films. A resistivity memory device comprises the first electrode(E1), the second electrode(E2), the first structure(S1), and the first switching device. The first electrode is at least one. The second electrode is arranged apart from the first electrode. The first structure is equipped between the first and the second electrode. The second structure comprises the first resistance alteration layer(R1). The first switching device is electrically connected to the first resistance alteration layer. At least one of the first and the second electrode comprises the alloy layer of the non-precious metals and noble metals.