发明名称 PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, AND FABRICATION METHOD OF PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC MATERIAL, AND PIEZOELECTRIC RESONATOR, ACTUATOR ELEMENT, AND PHYSICAL SENSOR USING PIEZOELECTRIC THIN FILM
摘要 A piezoelectric thin film is provided to reduce the power consumption and miniature the RF-MEMS device using the aluminium nitrate membrane contains the scandium. An aluminium nitrate membrane contains the scandium. When the total amount of the atom number of the aluminium nitrate membrane and the scandium is 100 atom %, the inclusion rate of the scandium is in range of 0.5~50 atom %. The aluminium nitrate membrane is installed on the top of the substrate. At least one layer of the intermediate layer is installed between the aluminium nitrate membrane and the substrate.
申请公布号 KR20080106072(A) 申请公布日期 2008.12.04
申请号 KR20080050510 申请日期 2008.05.29
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;DENSO CORPORATION 发明人 AKIYAMA MORITO;KAMOHARA TOSHIHIRO;UENO NAOHIRO;KANO KAZUHIKO;TESHIGAHARA AKIHIKO;TAKEUCHI YUKIHIRO;KAWAHARA NOBUAKI
分类号 H01L41/16;H01L21/203;H01L41/08;H01L41/18;H01L41/187;H01L41/316;H01L41/39;H03H3/02;H03H9/17;H03H9/56 主分类号 H01L41/16
代理机构 代理人
主权项
地址