| 摘要 |
A plasma CVD apparatus having the non-metal susceptor is provided to reduce the cost of the wafer processing and increase the productivity. A plasma CVD apparatus comprises the cooling susceptor, and the shower plate. The cooling susceptor functions to electrode. The substrate is loaded on the cooling susceptor and is contacted. The shower plate introduces the gas toward the susceptor through the multiple through holes which are formed inside the shower plate. The cooling susceptor is made of ceramic material including the cooling materiality flowing route to flow the cooling fluid. The shower plate functions as an electrode and is parallelly arranged to the susceptor.
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