Method For Dopant Calibration of Delta Doped Multilayered Structure

摘要

In a calibration method, the relation between dopant concentrations of delta-doping layers in a multilayered semiconductor structure and process parameters is determined S1 based on multiple bulk specimens of the material in which the delta-doping layers are located. A desired dopant concentration is selected S2, and the semiconductor structure with predetermined doping levels can be generated S3 based on the relation between the process parameters and the predetermined doping concentrations.