METHOD FOR MANUFACTURING SOI WAFER

摘要

A manufacturing method of the SOI wafer is provided to increase the productivity of SOI wafer including the SOI layer with uniform thickness of film. A manufacturing method of the SOI wafer comprises the following processes: the process of preparing for the donor wafer(10) consisting of the handle wafer(20) and the silicon substrate; the ion injection process of injecting at least one of the hydrogen ion or the noble gases ion inside the donor wafer and forming the ion implantation layer; the soldering process of welding the side welded of handle wafer and the side ion-implanted of the donor wafer; the stripping process for thinning the donor wafer by peeling off the donor wafer at the ion implantation layer; the etching process of etching the SOI layer and reducing the thickness of the SOI layer; the step for rough etching; the step for measuring the film thickness distribution of the SOI layer after the tub etching; the step for precisely dry-etching based on the film thickness distribution of the measured SOI layer.