POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD OF FORMING RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a positive resist composition for immersion exposure having good lithography characteristics and also having hydrophobicity suitable for immersion exposure, and a method of forming a resist pattern.

SOLUTION: The positive resist composition for immersion exposure includes: a base ingredient (A) whose solubility in an alkali developer increases by the action of an acid and which has no structural unit (c0) represented by specific chemical formula; an acid generator ingredient (B) which generates an acid upon exposure to light; and a fluorine-containing high molecular compound (C) having the structural unit (c0) and a structural unit (c1) derived from an acrylic ester containing an acid-dissociable dissolution inhibiting group.

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