FORMING METHOD AND DEVICE OF SEMICONDUCTOR THIN FILM, CRYSTALLIZATION METHOD, AND CRYSTALLIZATION DEVICE

摘要

PROBLEM TO BE SOLVED: To form a semiconductor thin film having superior crystallinity on a substrate made of insulator. SOLUTION: An excimer laser 1 as an illumination source; a homogenizer 3 which equalizes light intensity distribution of a light beam emitted from the excimer laser 1; an amplitude modulation mask 5 which performs amplitude modulation for the light so that the amplitude of light of which light intensity is equalized by the homogenizer 3, is increased in a direction of relative motion with respect to an amorphous substrate 9; a projection optical system 6 for projecting the light beam of which amplitude is modulated by the amplitude modulation mask 5, onto a non-single-crystalline semiconductor layer 10 formed on the amorphous substrate 9 so that predetermined radiation energy may be obtained; a phase shift mask 8 for establishing a point of low temperature in a radiation plane of the light; and an substrate stage capable of scanning in X-Y directions for moving relatively the light and the amorphous substrate 9. COPYRIGHT: (C)2009,JPO&INPIT