| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can achieve a high throughput and high yields with few particles. SOLUTION: In a batch-type plasma processing apparatus, susceptor electrodes 50 for placing wafers 1 thereon are spaced at predetermined intervals in multiple stages in a processing chamber, power is supplied to the susceptor electrodes 50 of the respective stages to generate plasma, and plasma processing is performed on the wafers 1 placed on the susceptor electrodes 50 of the respective stages. The plasma processing apparatus further includes, on tweezers 25 for transporting the wafers 1, three support bars 26, 27, and 28 each of which has a long central portion and short sides. The three support bars are each configured to support three points on the underside of the outer edge of the wafer 1. Moreover, three clearance grooves 52, 53, and 54 where the three support bars are inserted are formed on the susceptor electrodes 50 of the respective stages. The plurality of wafers can be simultaneously transferred to the susceptor electrodes 50 of the multiple stages, thereby increasing a throughput. By preventing the tweezers from coming into contact with the clearance grooves, the generation of particles can be prevented and thus yields can be improved. COPYRIGHT: (C)2009,JPO&INPIT
|
