| 摘要 |
PROBLEM TO BE SOLVED: To provide a static induction thyristor semiconductor device which has a high gate-cathode breakdown voltage. SOLUTION: The static induction thyristor has, on a first main surface of a first conductivity type semiconductor substrate, a cathode region 4 being an impurity region of a first conductivity type, an anode region 3 being an impurity region of a second conductivity type enclosing the cathode region, a gate region 5 being striped second conductivity type impurity region portion which has a mesa groove portion 6 between the cathode region and anode region, and is arrayed in a direction crossing the direction of a peripheral edge portion on a second main surface and a mesa groove direction alternately with first conductivity type impurities of the semiconductor substrate, a mesa groove portion which is deep enough to reach the gate region from the first main surface, a cathode metal electrode on the cathode region on the first main surface, an anode metal electrode on the anode region, and a gate metal electrode on the gate region on the second main surface. The static induction thyristor has the structure wherein a sufficient gate-cathode distance can be secured, so a high gate-cathode breakdown voltage can be secured. COPYRIGHT: (C)2009,JPO&INPIT
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