| 摘要 |
PROBLEM TO BE SOLVED: To prevent dissolved liquid of the metal silicide from remaining at a space between word lines. SOLUTION: A semiconductor memory device comprises: a memory cell array area provided with first and second memory cells; a word line contact area adjacent to the memory cell array area and having a second active area; first and second word lines WL to WL8 with a metal silicide structure, functioning respectively as the control gate electrodes of the first and second memory cells and arranged to straddle the memory cell array area and the word line contact area; and a word line driver connected to one end of each of the first and second word lines WL1 to WL8 via first and second contact holes CH, wherein, a dummy gate electrode is arranged just below the first and second word lines WL1 to WL8 in the active area in the word line contact area. COPYRIGHT: (C)2009,JPO&INPIT
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