MEMORY DEVICE, DATA RECORDING METHOD, AND IC TAG

摘要

PROBLEM TO BE SOLVED: To provide a memory element which is simple in structure and is easy to manufacture. SOLUTION: A memory element 10 has a first electrode 13, a second electrode 16, and a third electrode 18. The memory element 10 has a memory portion 14 which intervenes between the first electrode 13 and a heating heater portion 15. The third electrode 18 is arranged on the heating heater portion 15, and the second electrode 16 is arranged in a side of the heating heater portion 15. The memory portion 14 has a long linear conjugate structure, and includes a conductive liquid crystal compound having a smectic phase as a liquid crystal phase. The heat processing of the memory portion 14 is carried out by heating the heating heater portion 15, information can be written in the memory portion by selectively forming the memory portion having both electroconductivity and optical anisotropy. COPYRIGHT: (C)2009,JPO&INPIT