发明名称 |
DRIVE CIRCUIT AND DRAIN EXTENDED TRANSISTOR FOR USE THEREIN |
摘要 |
A transistor (100) comprises a source region of a first conductivity type and electrically communicating with a first semiconductor region. The transistor also comprises a drain region of the first conductivity type and electrically communicating with a second semiconductor region that differs from the first semiconductor region. An interface exists between the first semiconductor region and the second semiconductor region. The transistor also comprises a voltage tap region comprising at least a portion located in a position that is closer to the interface than the drain region (118). A mixed technology circuit is also described. |
申请公布号 |
WO2007124413(A3) |
申请公布日期 |
2008.12.04 |
申请号 |
WO2007US67068 |
申请日期 |
2007.04.20 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;PENDHARKAR, SAMEER, P. |
发明人 |
PENDHARKAR, SAMEER, P. |
分类号 |
H01L21/425;H01L29/94;H04B1/06 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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