METHOD FOR MANUFACTURING GAN-BASED NITRIDE SEMICONDUCTOR SELF-SUPPORTING SUBSTRATE

摘要

[PROBLEMS] To provide a method for manufacturing a stress-free GaN-based nitride compound semiconductor at low cost by simple process. [MEANS FOR SOLVING PROBLEMS] A method for manufacturing a GaN-based nitride semiconductor self-supporting substrate includes a step of preparing a substrate; a step of forming a GaN dot and an NH4Cl layer on the substrate; a step of forming a low-temperature GaN buffer layer on the GaN dot and the NH4Cl layer; a step of forming a GaN nitride semiconductor layer on the low-temperature GaN buffer layer; and a step of naturally removing the GaN-based nitride semiconductor layer from the substrate by returning the substrate temperature to a normal temperature.