| 摘要 |
<p>A thin film transistor, a manufacturing method thereof and an organic light emitting display device using the same are provided to remove the metal catalyst remained within the region where the channel region is formed. A manufacturing method of the polycrystalline silicon layer comprises the following steps: the step for forming the amorphous silicon layer on the substrate(200); the step for crystallizing the amorphous silicon layer into the polycrystalline silicon layer(220) by using the metallic catalyst; the step for forming the metal layer pattern or the metal silicide layer pattern(230) contacting with the top or bottom of the polycrystalline silicon layer; the step for thermal-treating the substrate in order to getter the metal catalyst.</p> |
