发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DISPLAY DEVICE |
摘要 |
<p>A manufacturing method of the display device and the semiconductor device are provided to realize the system-on-panel of the display device without complicating the process of thin film transistor by omitting the crystallization process of the semiconductor film after deposition. A manufacturing method of the semiconductor device comprises the process of forming the microcrystal semiconductor film of thin film transistors(72,73). The microcrystal semiconductor film is formed by using the microwave plasma device in which the frequency is 1 GHz or greater. The microcrystal semiconductor film is used for the channel forming region of the thin film transistor. Selenium tetrachloride or silicon halide is used for a source gas.</p> |
申请公布号 |
KR20080106049(A) |
申请公布日期 |
2008.12.04 |
申请号 |
KR20080050004 |
申请日期 |
2008.05.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI |
分类号 |
H01L21/205;H01L29/786 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|