| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device wherein a standby current is small. <P>SOLUTION: In this SRAM, memory cell MC internal power supply voltages SVDD are applied to the back gates of P channel MOS transistors 50 to 52, 55 and 56 included in an equalizer 50, a write driver 24, and a column select gate 25. Thus, even when an internal power supply voltage VDD for a peripheral circuit is cut off to reduce current consumption during standby, the threshold value voltages of the P channel MOS transistors 50 to 52, 55 and 56 are maintained high. Thus, a leak current is reduced. <P>COPYRIGHT: (C)2009,JPO&INPIT |
