| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic memory device for shortening a time for disturb-test for excluding a defective memory cell weak in a disturb-property. SOLUTION: The thin film magnetic memory device is provided with a plurality of current supply circuits provided respectively to a plurality of digit lines and supplying a first data write current. Respective current supply circuits supply data write current being less than the current during data writing at the test time. Also, A second data write current is supplied to one of a plurality of bit lines during the test time. That is, the first data write current being less than the normal current is supplied to the digit line, and the second data write current is supplied to the bit line. Therefore, so to speak the disturb-test which is performed by using a magnetic field generated by the first and the second data write current can be executed in parallel to a memory cell column. Thereby, the test time can be shortened. COPYRIGHT: (C)2009,JPO&INPIT
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