| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and apparatus for producing a SiC single crystal, by which a sublimated gas can be continuously supplied to a seed crystal from a powdery raw material. SOLUTION: When heating of a crucible 1 is started, the sublimated gas generated from the powdery raw material 5 exposed to a hollow part of a separation wall 4 is supplied to a growth space area 6. Then, after a certain time from the start of heating the crucible 1, a lid 1b is moved relatively to a vessel body 1a so as to be separated from the vessel body 1a. Thereby, the end face 4e on the other end side 4c of the separation wall 4 is separated from the bottom surface of the vessel body 1a, the powdery raw material 5 brought into contact with the other end side 4c of the separation wall 4 is exposed to the inside of the vessel body 1a as a new supply face of the sublimated gas, and the sublimated gas is supplied from the exposed part to the growth space area 6 through a gas supply passage and through-holes 4d. The SiC single crystal is grown under such conditions. COPYRIGHT: (C)2009,JPO&INPIT
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