发明名称 |
METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY AT LEAST PARTIALLY REMOVING AN N-TYPE SILICON CARBIDE SUBSTRATE, AND SILICON CARBIDE POWER DEVICES SO FABRICATED |
摘要 |
A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described.
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申请公布号 |
US2008296771(A1) |
申请公布日期 |
2008.12.04 |
申请号 |
US20070756020 |
申请日期 |
2007.05.31 |
申请人 |
CREE, INC. |
发明人 |
DAS MRINAL KANTI;ZHANG QINGCHUN;CLAYTON, JR. JOHN M.;DONOFRIO MATTHEW |
分类号 |
H01L21/44;H01L23/48 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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