| 摘要 |
A method of treating plasma using plasma is provided. During a plasma treating process, a power for generating plasma is supplied as a pulse to prevent charge density of a wafer surface from increasing with rise of electron energy. A magnetic field is provided at a region, where a plasma is generated, to prevent the plasma density from decreasing when the power is supplied as a pulse. The magnetic field is formed to be directed toward the interior or exterior of a housing. Further, a power for generating plasma is supplied as a pulse to selectively improve an etching rate of a wafer central region or a wafer edge region.
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