发明名称 SEMICONDUCTOR FABRICATION METHOD SUITABLE FOR MEMS
摘要 A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.
申请公布号 US2008299769(A1) 申请公布日期 2008.12.04
申请号 US20070755437 申请日期 2007.05.30
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HUANG TSUNG-CHENG;WU HUA-SHU;CHANG FA-YUAN;LIN I-CHING;LEE HSI-LUNG;CHIEN YUAN-HAO
分类号 H01L21/463 主分类号 H01L21/463
代理机构 代理人
主权项
地址