METHOD AND APPARATUS FOR A STEPPED-DRIFT MOSFET

摘要

A power metal-oxide-semiconductor field effect transistor (MOSFET) (100) incorporates a stepped drift region including a shallow trench insulator (STI) (112) partially overlapped by the gate (114) and which extends a portion of the distance to a drain region (122). A silicide block extends from and partially overlaps STI (112) and drain region (122). The STI (112) has a width that is approximately 50% to 75% of the drift region.