RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To realize patterning not substantially accompanied by the generation of pattern defects such as a microbridge especially when a fine resist pattern of ≤0.2 μm is formed using a chemically amplified radiation-sensitive resin composition having good sensitivity and resolution and excellent in process margin and process stability.

SOLUTION: A base resin in the chemically amplified radiation-sensitive resin composition is an alkali-soluble resin or an alkali-insoluble or slightly alkali-soluble resin protected by an acid-dissociable protective group, and the amount of an ultrahigh molecular weight component having a weight average molecular weight (expressed in terms of polystyrene) of ≥1,000,000 in the resin is ≤0.2 ppm as obtained by gel permeation chromatography by a multiple light scattering method. The chemically amplified radiation-sensitive resin composition is applied on an object 2 to be processed to form a photoresist film 3 and this film 3 is exposed and developed to form a fine resist pattern 4 of ≤0.2 μm. The object 2 is then dry-etched to perform patterning of a gate electrode, a hole shape and a groove shape of a semiconductor device.

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