发明名称 FIELD-EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a field-effect transistor with excellent field-effect mobility and on/off ratio. SOLUTION: In a field-effect transistor provided with at least a p-type organic semiconductor, a source electrode, a drain electrode, and a gate electrode, the p-type organic semiconductor component contains a high molecular compound having a repeating unit represented by the general formula (1) and a weight-average molecular weight of 3,000 to 50,000. In the general formula (1), Ar<SP>1</SP>is a substituted or unsubstituted aryl group having 6 to 60 carbon atoms: R<SP>1</SP>and R<SP>2</SP>are each independently a hydrogen atom, an alkyl group or an alkoxy group having 1 to 18 carbon atoms, or an aryl group having 6 to 18 carbon atoms; a condensed ring with adjacent carbon atoms may be formed; m represents an integer of 0-5; a represents an integer of 0-4; and b represents an integer of 0≤b≤2m+4. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294321(A) 申请公布日期 2008.12.04
申请号 JP20070139959 申请日期 2007.05.28
申请人 KYUSHU UNIV;TOSOH CORP 发明人 TSUTSUI TETSUO;YASUDA TAKESHI;SUZUKI KOSEI;TAKAHASHI MITSURU
分类号 H01L51/30;C08G73/02;H01L29/786;H01L51/05 主分类号 H01L51/30
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