发明名称 SOLID-STATE IMAGING DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a contact type linear sensor capable of reducing power consumption. SOLUTION: A source follower circuit included in a solid-state imaging element in the contact type linear sensor has a depletion MOS transistor connected to a power supply potential and an enhancement MOS transistor connected to a ground potential, wherein a signal voltage passed through an amplifier circuit is applied to the gate electrode of the depletion MOS transistor and a selection signal is applied as a gate voltage of the depletion MOS transistor. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008294775(A) 申请公布日期 2008.12.04
申请号 JP20070138456 申请日期 2007.05.24
申请人 SONY CORP 发明人 NAKANO YASUHIRO
分类号 H04N5/335;H04N5/369;H04N5/374;H04N5/376 主分类号 H04N5/335
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