| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can conduct heat treatments, while reducing wafer cracking. SOLUTION: A method of manufacturing a semiconductor device that involves a heat treatment of a semiconductor substrate 11; removes a superficial layer from an upper surface 34 of an edge part of the semiconductor substrate 11, bevel surfaces 32 and 33 of the edge part of the semiconductor substrate and a side surface 31 of the edge part of the semiconductor substrate 11; and conducting the heat treatment of the semiconductor substrate 11, by irradiating the semiconductor substrate 11 with a light having a pulse width range of 0.1 ms to 100 ms from a light source, after the superficial layer is removed. COPYRIGHT: (C)2009,JPO&INPIT
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